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ESE18R TA8867 ML60852 L4002 FCT16 8NQ11 R6008ANX PD100
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  inchange semiconductor isc product specification isc silicon npn power transistor 2SC1569 description high collector-emitter breakdown voltage- :v (br)ceo = 300v(min) dc current gain- : h fe = 40-170 @i c = 50ma, v ce = 10v high cur rent-gain bandwidth product applications designed for color tv chroma output applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 300 v v ceo collector-emitter voltage 300 v v ebo emitter-base voltage 5 v i c collector current-continuous 150 ma i e emitter current-continuous -150 ma collector power dissipation @ t a =25 1.5 p c collector power dissipation @ t c =25 12.5 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC1569 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 5ma ; i b = 0 300 v v ce (sat) collector-emitter saturation voltage i c = 100ma; i b = 20ma 1.0 v v be (sat) base-emitter saturation voltage i c = 100ma; i b = 20ma 1.2 v i cbo collector cutoff current v cb = 100v ; i e = 0 1.0 a i ebo emitter cutoff current v eb = 5v; i c = 0 1.0 a h fe dc current gain i c = 50ma ; v ce = 10v 40 170 c ob output capacitance i e = 0; v cb = 50v; f test = 1mhz 5 pf f t current-gain?bandwidth product i c = 30ma; v ce = 10v 40 mhz isc website www.iscsemi.cn 2


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